BAV199HMFHT116
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
Electronic components
SS1FL3-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 480 MV @ 1 A
BAV70-G3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 250mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
RS1MFSHMWG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
MMBD4448HTA-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 250mA
- Operating Temperature - Junction
- 150°C (Max)
SS16LWHRVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 1 A
BAS70SW-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
1N4006FFG
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
BAV199HMT116
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
RS07G-M-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 700 MA
BAS40S-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
RB055LAM-40TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 620 MV @ 3 A
BAS21A-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 150°C
CUHS15S30,H3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 500 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 430 MV @ 1.5 A
BAS40-06Q-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
BAV99HMFHT116
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
V2PM10LHM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1 A
BAT54A-QR
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C