V30DM63CLHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 175°C
Electronic components
SS1060HE-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 30 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 1 A
VX60100C-M3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
STR60100CT_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAT42W-G3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 50 MA
SBM3045VCT_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
US1D_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
RB520VM-30TE-17
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 200 MA
STPS3060CW
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- 150°C (Max)
NSD914F3T5G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA
V30D60CL-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 150°C
US1M_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
VS-12CWQ10FNHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- 150°C (Max)
S1KHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
VX60M100CHM3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 175°C
PMEG45T10EXD-QX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 20 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 520 MV @ 1 A
V40100C-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -40°C ~ 150°C
V20120C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 150°C