APT30DQ120BCTG
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 175°C
Electronic components
PMEG3015EH,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1 MA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1.5 A
VS-MBR4045WT-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
AU1FK-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.85 V @ 1 A
V40DM63CHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -40°C ~ 175°C
AU1FM-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.85 V @ 1 A
PSDH3060CCL1_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
SS14HE3-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
V30DL63CLHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 150°C
NRVS1GFL
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
VX80M100PWHM3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -40°C ~ 175°C
SA2J-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
VS-43CTQ100-1-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 175°C
US1004FL_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 1 A
VS-62CTQ030-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -65°C ~ 150°C
V1P22-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 15 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 880 MV @ 1 A
VS-47CTQ020-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
S1J_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A