BAW56-HF
- Manufacturer
- Comchip Technology
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
Electronic components
SE8D30J-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
BAV70-HF
- Manufacturer
- Comchip Technology
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
VS-3EAH02-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 960 MV @ 3 A
BAT54AQ-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 150°C
BAS21S-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
MER3DAH-AU_R1_007A1
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 3 A
BAS21SLT1G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 225mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
RGL41A-E3/96
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
BAS40-06LT1G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 120mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
SE40NG-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 4 A
BAV99-HE3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -55°C ~ 150°C
SE40ND-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 4 A
1SS181,LF
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 125°C (Max)
CRS14(TE85L,Q,M)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 50 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 490 MV @ 2 A
PMEG100T20ELPX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1.25 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 2 A
BAV70HMFHT116
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
EGP10C
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1 A