SE8D30JHM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
Electronic components
GSD2004A-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C (Max)
V5N103HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 210 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 710 MV @ 5 A
DAN202UMFHTL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 150°C (Max)
CD214B-FS3G
- Manufacturer
- Bourns Inc.
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 3 A
MMBD7000-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
SE30NGHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
BAV23CQ-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 400mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
V5NL63HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 80 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 5 A
MMBD3004S-13-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 225mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
SR24-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 2 A
BAV170-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 125mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
RF08L6STE25
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 800 MA
MMBD7000-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
RGP10JE-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
BAV99-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -55°C ~ 150°C
CD214C-S3K
- Manufacturer
- Bourns Inc.
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 3 A
BAS40-06,215
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 120mA (DC)
- Operating Temperature - Junction
- 150°C (Max)