S3J-M3/57T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 2.5 A
Electronic components
DA228UMFHTL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 150°C (Max)
STTH1R04UY
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 1 A
HN2S01FUTE85LF
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 125°C (Max)
V7NM153HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 70 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 980 MV @ 7 A
BAV199HYT116
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- 150°C
PMEG6030EP-QX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 530 MV @ 3 A
NSVBAS21TMR6T1G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
PMEG4030EP,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 490 MV @ 3 A
BAS31,215
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 250mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
CMS10I40A(TE12L,QM
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 1 A
BAV23S-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 400mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
RBR1VWM40ATFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 50 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 520 MV @ 1 A
DAN222MFHT2L
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 150°C (Max)
PMEG030V050EPE-QZ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 150 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 5 A
BAT54S-G3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Operating Temperature - Junction
- 125°C (Max)
RR1LAM6STFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
BAS70-04T-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C