V8PM153HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 870 MV @ 8 A
Electronic components
MMBD4448DW-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 250mA
- Operating Temperature - Junction
- -65°C ~ 150°C
V10PM63HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 25 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 10 A
BAW101S-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 250mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
STR8100LSS_AY_00301
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 790 MV @ 8 A
NSVBAV70TT3G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 100mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
AS3BJHM3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 3 A
RBR3L60BDDTE25
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 150 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 560 MV @ 3 A
BAT54CHYT116
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C
VSSAF522HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 5 A
BAS70-04-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
SS5P6-M3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 150 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 690 MV @ 5 A
BAS70-06-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 125°C (Max)
BAS70-05-HE3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 125°C (Max)
EMN11T2R
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 150°C (Max)
BYT51D-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
SVM1045VB_R2_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 250 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 470 MV @ 10 A