PNE20080EPEZ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 8 A
Electronic components
BAS40-04B5003
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 120mA (DC)
- Operating Temperature - Junction
- 150°C
1N4148WTQ-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
NTE639
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 5 µA @ 1300 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 3 A
BYW51-200
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C (Max)
SS29
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 400 µA @ 90 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 2 A
G40H100CTFW
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 175°C
1SS416CT,L3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 50 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 100 MA
G30H100CTFW
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 175°C
BAS40L,315
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 10 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 40 MA
VB30150C-M3/8W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
NRVTS360ETFSWFTAG
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 12 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 6 A
V20M120M-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
SS35HE3_B/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 3 A
SBR20100CTFP
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
1SS193,LF
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 500 NA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
SBR20150CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C