ES2CA-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 2 A
Electronic components
STPS40M80CG-TR
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- 175°C (Max)
1N3070TR
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 NA @ 175 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
V60D60CHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
RB521SM-60FHT2R
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
SBR20A150CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
10A01-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 A
MBRB2545CTHE3_B/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 12.5A
- Operating Temperature - Junction
- -65°C ~ 150°C
UF4006
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
BAV199E6359
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C
RB530CM-30T2R
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 300 NA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 460 MV @ 10 MA
SS14-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
BAV 70S H6327
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
RBR3L40CDDTE25
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 3 A
BAW56WE6327
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
BAS316WS RRG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
TND921
- Manufacturer
- Allegro MicroSystems
- Current - Average Rectified (Io) / diode
- 10mA (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA