TSF40L200C
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
Electronic components
MUR160H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
VX80100PWHM3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -40°C ~ 150°C
V8PM153-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 870 MV @ 8 A
MBR30200PTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
SS26-M3/52T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 400 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 2 A
WNSC2D16650CWQ
- Manufacturer
- WeEn Semiconductors
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- 175°C
V8PM63-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 640 MV @ 8 A
DSEC16-12AS-TRL
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
CMS20I30A(TE12L,QM
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 100 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 2 A
MBR40200PTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 150°C
SL34PL-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 3 A
M6035P-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -65°C ~ 150°C
SE50PAJHM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.16 V @ 5 A
MBR3060PTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
SL22-M3/5BT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 400 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 2 A
MBR60100PT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -55°C ~ 150°C
V7NL63HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 110 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 7 A