SK310BHE3-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 100 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 3 A
Electronic components
MBR8045WT
- Manufacturer
- SMC Diode Solutions
- Operating Temperature - Junction
- -55°C ~ 150°C
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 40 A
MPG06K-E3/53
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
TSF20U60C
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
STR10100BF_R1_00701
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 770 MV @ 10 A
APT15D100BCTG
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 175°C
MPG06B-E3/53
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MBR40200PT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 150°C
S4PJHM3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 4 A
DSEC16-12AS-TUB
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
BYM12-150-E3/97
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
S8-4148/TR7
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 400mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
GV808_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 8 A
CMS30I40A(TE12L,QM
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 3 A
SBR30A150CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
AS3BJ-M3/5BT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 3 A
VS-40CPQ060HN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 150°C
SBR60A200CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -65°C ~ 175°C