RS1KLH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 800 MA
Electronic components
MBR2X060A080
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -40°C ~ 150°C
VS-E5PX3006LHN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.1 V @ 30 A
MDD56-14N1B
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 95A
- Operating Temperature - Junction
- -40°C ~ 150°C
SICB1060P-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 44 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 10 A
RS1BLH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 800 MA
160CMQ040
- Manufacturer
- SMC Diode Solutions
- Current - Average Rectified (Io) / diode
- 80A
- Operating Temperature - Junction
- -55°C ~ 150°C
DFE250X600NA
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 125A
- Operating Temperature - Junction
- -40°C ~ 150°C
RSFJLH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 500 MA
PSDF3060S1_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 250 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.3 V @ 30 A
B482F-2T
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 35A
- Operating Temperature - Junction
- -40°C ~ 125°C
RSFJLHRVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 500 MA
DMA200XA1600NA
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -40°C ~ 150°C
VS-20ETF12S-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.31 V @ 20 A
VS-VSKC56/16
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
SE50PABHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.16 V @ 5 A
GSXD160A020S1-D3
- Manufacturer
- SemiQ
- Current - Average Rectified (Io) / diode
- 160A
- Operating Temperature - Junction
- -40°C ~ 150°C
VS-20ETS12FP-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 20 A