SICF0860P-BP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 36 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 8 A
Electronic components
286-890
- Manufacturer
- WAGO Corporation
- Current - Average Rectified (Io) / diode
- 6.3A
- Operating Temperature - Junction
- -25°C ~ 40°C
RS3A-M3/9AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 2.5 A
VS-VSKC91/06
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 50A
- Operating Temperature - Junction
- -40°C ~ 150°C
RS3A-M3/57T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 2.5 A
JANTXV1N4148UBCD/TR
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 1A
- Operating Temperature - Junction
- -65°C ~ 200°C
VS-3C10ET07T-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 55 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 10 A
MSRT15060A
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
GP10ME-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 1 A
GSXD060A012S1-D3
- Manufacturer
- SemiQ
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -40°C ~ 150°C
WNSC6D16650CW6Q
- Manufacturer
- WeEn Semiconductors
- Current - Reverse Leakage @ Vr
- 80 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.45 V @ 16 A
GSXD120A008S1-D3
- Manufacturer
- SemiQ
- Current - Average Rectified (Io) / diode
- 120A
- Operating Temperature - Junction
- -40°C ~ 150°C
GP10DE-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MUR2X100A10
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 175°C
FFSP0865A
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.75 V @ 8 A
MSRT150100A
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
GP10-4003E-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Technology
- Standard
- Voltage - DC Reverse (Vr) (Max)
- 200 V
MUR2X030A02
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 175°C