FDLL333
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 3 NA @ 125 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 300 MA
Electronic components
MBR3050PT
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -65°C ~ 150°C
MUR320SBHR5G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 3 A
BAW56WE6327HTSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
BAV21WS-G3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
BAV99WB6327XT
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
RGP30D-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 3 A
BAV 199 B6327
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 150°C (Max)
STTH4R02UY
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 3 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 4 A
ISL9K460P3
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 4A
- Operating Temperature - Junction
- -55°C ~ 175°C
SS24-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 2 A
BAW 56 E6433
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
RBQ10RSM65BTL1
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 150 µA @ 65 V
- Voltage - Forward (Vf) (Max) @ If
- 670 MV @ 10 A
BAT 64-04T E6327
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 120mA
- Operating Temperature - Junction
- 150°C (Max)
SD103AW-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
BAS7007WE6327BTSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
BAV20WS-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
BAS 16-07L4 E6327
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)