BAT30CFILM
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 300mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
Electronic components
SFF1604G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 16 A
SS23-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 500 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 2 A
FFA10U40DNTU
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
RFN20NS6SFHTL
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.55 V @ 20 A
BAW101E6433HTMA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 250mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
B120-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
BAS 70-06 B5003
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
SDB20S30
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 10A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
SE12DTGHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 12 A
PMEG6010CEGWJ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 660 MV @ 1 A
MBR4050PT
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -65°C ~ 150°C
FFPF30UA60S
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 30 A
BAS 40-05 B5003
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 120mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
SE10DTGHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 15 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 10 A
BAV 99T E6327
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
PMEG3010AESBYL
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 255 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 480 MV @ 1 A
BAW56SB6327XT
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)