JANTX1N5554
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 9 A
Electronic components
BYQ28EB-100HE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
ES1D-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 1 A
UB10BCT-E3/8W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N5802
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 1 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 1 A
MBRB25H45CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
SS16-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 1 A
STPS40SM100CG
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- 150°C (Max)
RS1A
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
SS8P3CLHM3/87A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 4A
- Operating Temperature - Junction
- -55°C ~ 150°C
RFU02VSM8STR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 3 V @ 200 MA
MBRB2050CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
SS1H10HE3_B/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 860 MV @ 2 A
MBRB2560CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
FFSB2065BDN-F085
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 40 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.75 V @ 10 A
MBRB15H60CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -65°C ~ 175°C
UF4005-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
DSEE8-08CC
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C