MBRB30H100CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
Electronic components
BAS16TT1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
UB10CCT-E3/8W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRB15H60CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -65°C ~ 175°C
SS14-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
UGB18ACT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 18A
- Operating Temperature - Junction
- -65°C ~ 150°C
RB411DT146
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 30 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 500 MA
MBRB25H60CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
1SS389,L3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 20 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 100 MA
SS8P4CHM3/87A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 4A
- Operating Temperature - Junction
- -55°C ~ 150°C
B180-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 µA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 790 MV @ 1 A
MBRB25H35CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
MSC030SDA330B
- Manufacturer
- Microchip Technology
- Reverse Recovery Time (trr)
- 0 Ns
- Technology
- SiC (Silicon Carbide) Schottky
UGB10FCT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
S3G-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 3 A
FEPB6DTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
SL310A-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 500 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 3 A
SBLB2030CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C