RBR3LB30BTBR1
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 80 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 530 MV @ 3 A
Electronic components
V20M120CHM3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C
BAS85-GS08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
UFT14260D
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 70A
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 70 A
RB168VYM-40FHTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 500 NA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 790 MV @ 1 A
VS-83CNQ100ASLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 175°C
1N459A
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 25 NA @ 175 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
VS-113CNQ100ASLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 55A
- Operating Temperature - Junction
- -55°C ~ 175°C
RB162MM-60TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 1 A
VS-20CTQ150SPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
RGP15A
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1.5 A
TRS12N65D,S1F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 6A (DC)
- Operating Temperature - Junction
- 175°C (Max)
SDM03U40Q-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 NA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 370 MV @ 1 MA
V10150CHM3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 150°C
S1DHE3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
UFT14020A
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 70A
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 70 A
EGF1T-E3/5CA
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1300 V
- Voltage - Forward (Vf) (Max) @ If
- 3 V @ 1 A
TRS20N65D,S1F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 10A (DC)
- Operating Temperature - Junction
- 175°C (Max)