VI20120CHM3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 150°C
Electronic components
PNE200100EPEZ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 960 MV @ 10 A
VS-40CTQ150-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 175°C
BAT43W-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 15 MA
VS-12CWQ03FNTRPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
RR1VWM4STR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 1 A
VE3045C-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 150°C
UF4007
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
VS-20CTQ150-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
PMEG4005EH,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 470 MV @ 500 MA
VS-42CTQ030-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
RS1JFA
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 800 MA
FMEN-220A
- Manufacturer
- Sanken Electric USA Inc.
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -40°C ~ 150°C
SS8P2LHM3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 570 MV @ 8 A
VS-16CTQ060-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 175°C
UF1001-T
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
V60H150PW-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 175°C
MBRAD545H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 100 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 5 A