RB095BM-40TL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- 150°C (Max)
Electronic components
BYV26DGP-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 1 A
MB10H90CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -65°C ~ 175°C
RS2GHE3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1.5 A
BAS321-QF
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
TSI30H200CW
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
S3MB
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 3 A
UFT14040
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 70A
- Operating Temperature - Junction
- -55°C ~ 150°C
STPS1H100UY
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 4 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 770 MV @ 1 A
TSI20H100CW
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
LS4154GS08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 30 MA
BAV99W/ZLX
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 150mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
MBR30H100CT-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
1N5059TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 2.5 A
GP15M-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1.5 A
MBRTA80080R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
UF104G_R2_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
BAW56W/ZLF
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 150mA (DC)
- Operating Temperature - Junction
- 150°C (Max)