GS1010HE_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
Electronic components
NRVUD620CTT4G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -65°C ~ 175°C
SB360-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 680 MV @ 3 A
MBRS1535CTHMNG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS16
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
IDW20G65C5BXKSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 10A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
TSI10H120CW
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 150°C
AS4PJ-M3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 962 MV @ 2 A
SS29-E3/52T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 90 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 1 A
MBRB30H35CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
VS-30CTQ045STRLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 175°C
BY255P-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
MBRS15150CTHMNG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
GS1D
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
RS3JB-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 3 A
MBRB15H60CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -65°C ~ 175°C
BAS316
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
BAS16UE6727HTSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 100mA (DC)
- Operating Temperature - Junction
- 150°C (Max)