MBR20150CTC0
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
Electronic components
MSS1P6HM3J_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 150 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 680 MV @ 1 A
1N5391-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 1.5 A
UGB15HTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 500 V
- Operating Temperature - Junction
- -55°C ~ 150°C
RS1KM
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
DD104N14KAHPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 104A
- Operating Temperature - Junction
- 150°C
IDH05G120C5XKSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 33 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 5 A
DD350N14KHPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 350A
- Operating Temperature - Junction
- -40°C ~ 150°C
FR2MBFL-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 2 A
DD104N12KHPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 104A
- Operating Temperature - Junction
- -40°C ~ 150°C
BAV3004WS-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 100 NA @ 240 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
UGB15HTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 500 V
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-60APH03-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.45 V @ 60 A
UGB12HT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 500 V
- Operating Temperature - Junction
- -55°C ~ 150°C
V2N103-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 150 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 670 MV @ 2 A
DD380N16KHPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 380A
- Operating Temperature - Junction
- -40°C ~ 150°C
VS-90APS12L-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 90 A
FESE16BT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Operating Temperature - Junction
- -65°C ~ 150°C