DD260N12KKHPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 260A
- Operating Temperature - Junction
- 150°C
Electronic components
C4D05120A
- Manufacturer
- Wolfspeed, Inc.
- Current - Reverse Leakage @ Vr
- 150 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 5 A
MBRF10150CTC0
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
ER2GBFL-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 2 A
MBR2545CTH
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
SCS310AMC
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 50 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 10 A
DD350N12KKHPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 350A
- Operating Temperature - Junction
- 150°C
SBR3U60P1Q-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 620 MV @ 3 A
DD171N12KKHPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 171A
- Operating Temperature - Junction
- 150°C
BAS21E6433HTMA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
MBR20100CTC0
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-APH3006-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.65 V @ 30 A
MBRF10200CTC0
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-1EAH02-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 970 MV @ 1 A
DD800S33K2CNOSA1
- Manufacturer
- Infineon Technologies
- Operating Temperature - Junction
- -40°C ~ 125°C
- Voltage - Forward (Vf) (Max) @ If
- 3.5 V @ 800 A
BAS16WH6433XTMA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
DD600N16KAHPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 600A
- Operating Temperature - Junction
- 150°C
1N5804
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 1 A