BAS40DW-6-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 125°C
Electronic components
RS1GL RVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 800 MA
SBR30A40CTFP-G
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -65°C ~ 150°C
SD103BW-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
BAS40-04-7-F-79
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
PU2BFSH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 2 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 930 MV @ 2 A
BAS40DW-05-7-F-2477
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 125°C
SD103AW-HE3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
DA227YFHT2R
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 150°C (Max)
BAS16T-7-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 2 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 50 MA
SBR30M40CTFP-JT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
RB160M-90TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 90 V
- Voltage - Forward (Vf) (Max) @ If
- 730 MV @ 1 A
SDM40E20LC-7-2477
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 400mA
- Operating Temperature - Junction
- -65°C ~ 125°C
B350A-M3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 720 MV @ 3 A
BAS40-5-13-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 125°C
BAT43WS-HE3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 15 MA
BAW56LT116
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
SA2K-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A