BAT54STA-2477
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 125°C
Electronic components
V2FM15-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.46 V @ 2 A
BAS40-04T-7-F-2477
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 125°C
RBS3LAM40ATR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 500 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 490 MV @ 3 A
SSRD8620CTT4RG
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -65°C ~ 175°C
SGLWH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 800 MA
SBT30150VCT_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
ES1C-E3/5AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 1 A
BAT54CW-7-F-2477
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 125°C
BYG23M-E3/TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
SBR20A120CTFP-G
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
SMLWH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 800 MA
BAS40TW-7-F-2477
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 125°C
SA2G-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
NRVBD660CTRLG
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -65°C ~ 175°C
SE30NG-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
BAS40W-05-7-F-2477
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 125°C
ES1BWG_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1 A