GP30M-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
Electronic components
RFN20TF6SFH
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.55 V @ 20 A
UPR15/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 2 A
VS-30ETU12THN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 145 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 2.68 V @ 30 A
FESF16DTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 16 A
TST10H150CW
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 100 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 880 MV @ 5 A
UFS330JE3/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
VS-10ETF06-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 10 A
UFS350JE3/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 500 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
UPS115U/TR7
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 MA @ 15 V
- Voltage - Forward (Vf) (Max) @ If
- 220 MV @ 1 A
FESF16CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 16 A
1N4153-1/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 50 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 880 MV @ 20 MA
UFS340JE3/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
VS-10ETF02-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 10 A
NXPSC04650D6J
- Manufacturer
- WeEn Semiconductors
- Current - Reverse Leakage @ Vr
- 170 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 4 A
VS-8EWH06FNTRHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.4 V @ 8 A
VS-8EWH06FNHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.4 V @ 8 A