SF2004PT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 20 A
Electronic components
UFS320JE3/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 3 A
FESF16BTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 16 A
RFUS20NS6STL
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.8 V @ 20 A
FESB16CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 16 A
UPR10/TR7
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 2 A
MUR440S V7G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 4 A
IDB30E60ATMA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 50 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2 V @ 30 A
JANTXV1N4148-1/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
VS-10WQ045FNTRHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 MA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 630 MV @ 10 A
UPR5/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 2 A
UFS360JE3/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 3 A
UFS315JE3/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 3 A
FESB16BTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 16 A
FESF16ATHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 16 A
1N6676/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 200 MA
MCP6021T-E/OT
- Manufacturer
- Microchip Technology
- Current - Supply
- 1 MA
- Current - Input Bias
- 5 NA
UFS305JE3/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 3 A