VS-40CTQ045-1-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
Products
1N4003RLG
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
SBR30A60CTFP
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
V10P45HM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 800 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 570 MV @ 10 A
FES1JE
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
NTE590
- Manufacturer
- NTE Electronics, Inc
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 150°C (Max)
MBR30200FCTE3/TU
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
VS-6EWL06FNTRL-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 6 A
SBR30A45CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
BAS16D-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
VX6045C-M3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N4001G-T
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
NRVTS860PFST3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 70 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 640 MV @ 8 A
VF20120C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 150°C
RGP30G-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 3 A
VS-25CTQ045-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-43CTQ100STRLHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 175°C
BAT54H,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA