BAV103
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
Products
NRTSV30H120CTG
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -55°C ~ 150°C
PDS5100HQ-13D
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 3.5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 710 MV @ 5 A
MBR2550CT
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 12.5A
- Operating Temperature - Junction
- -65°C ~ 150°C
VT6045C-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N4448W-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 720 MV @ 5 MA
VS-48CTQ060-1-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
RB530CM-60T2R
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 15 MA
VX60M60PW-M3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 175°C
SE70PJ-M3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 7 A
VT30L60C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 150°C
BAT46GWJ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 9 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 250 MA
VS-6CWQ10FNHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3.5A
- Operating Temperature - Junction
- 150°C (Max)
SS10P6HM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 150 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 670 MV @ 7 A
SBLB25L30CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 12.5A
- Operating Temperature - Junction
- -55°C ~ 150°C
SBR30A100CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
V10PWM153HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 840 MV @ 10 A