BAW56T-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 75mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
Products
SS110LSH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 50 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 1 A
BAS70-06 RFG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
NTE5837
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 3 A
BAT54SW
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
BAT54WS-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
BAT54AW
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
1N646UR-1/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 200 NA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 400 MA
BAW56HMFHT116
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
PCDP1065GC_T0_00601
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 100 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 10 A
BAT64SW-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 250mA
- Operating Temperature - Junction
- -65°C ~ 150°C
BAT43WS-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 15 MA
BAT64AW-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 250mA
- Operating Temperature - Junction
- -65°C ~ 150°C
1N485BUR/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 100 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
BAT64CW-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 250mA
- Operating Temperature - Junction
- -65°C ~ 150°C
PMEG4010EPK,315
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 4 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 1 A
NSVM1MA152WAT1G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 100mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
V2PM10-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 830 MV @ 2 A