BAV23C-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
Products
NTE5945
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 MA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 15 A
DAN202-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- -55°C ~ 150°C
SDM02M30LP3-7B
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 400 NA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 10 MA
BAS40-06-HF
- Manufacturer
- Comchip Technology
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C
NTE5983
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 15 MA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 40 A
BAR43S-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 150°C
NTE5942
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 MA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 15 A
DAP202U-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- -55°C ~ 150°C
US1R_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 1300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.9 V @ 1 A
MMBD3004S-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 225mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
NTE116-10
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
CDST-99-HF
- Manufacturer
- Comchip Technology
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
RSX051VYM30FHTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 200 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 390 MV @ 500 MA
BAS40-05-QR
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 120mA
- Operating Temperature - Junction
- 150°C
VS-30EPF06-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.41 V @ 30 A
BAS70-06-QR
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 70mA
- Operating Temperature - Junction
- 150°C
CUS15S40,H3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 1 A