ESH3C-M3/57T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 3 A
Products
MBRT60035
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
RB558VYM150FHTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 500 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 500 MA
MSRTA300140AD
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
ESH3B-M3/9AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 3 A
MBRT20030
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
1PS79SB70,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 10 µA @ 70 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
JANTXV1N5712UBD/TR
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 75mA
- Operating Temperature - Junction
- -65°C ~ 150°C
SE40PDHM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 4 A
MBRT60020
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
RBS1LAM40ATR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 400 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 380 MV @ 1 A
MBR40080CTR
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
SE100PWJ-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.14 V @ 10 A
MBRT400200
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
SA2B-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
2954879
- Manufacturer
- Phoenix Contact
- Current - Average Rectified (Io) / diode
- 300mA
- Operating Temperature - Junction
- -20°C ~ 50°C
RR2L6SDDTE25
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
SB830F_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 8 A