F1827CCD600
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 25A (DC)
- Operating Temperature - Junction
- -40°C ~ 125°C
Products
MPG06D-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
286-826
- Manufacturer
- WAGO Corporation
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -25°C ~ 40°C
MURT40010
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
BYW53-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
MDD255-12N1
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 270A
- Operating Temperature - Junction
- -40°C ~ 150°C
BAT54WS-HE3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
US2DA
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1.5 A
MBRT600200
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
F18107CCD1200
- Manufacturer
- Sensata-Crydom
- Current - Average Rectified (Io) / diode
- 105A (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1.65 V @ 300 A
BYT51B-TAP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MURT30010
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
UF5406GP-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 3 A
MURT20010
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
BYG20G-E3/TR3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 1.5 A
MBRT60080
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
PMEG3005ESFYL
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 9 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 720 MV @ 500 MA
UF5400GP-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 3 A