SBT80-10LS
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 150°C
Products
BAS16GWJ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 500 NA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
UGF10BCTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
SBR2U150SA-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 75 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 2 A
DA3X101F0L
- Manufacturer
- Panasonic Electronic Components
- Current - Average Rectified (Io) / diode
- 100mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
MSKD36-08
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 36A
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 100 A
CMF04(TE12L,Q,M)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 50 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 500 MA
SBT100-16JS
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS316Z
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 500 NA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
UGB18DCTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 18A
- Operating Temperature - Junction
- -65°C ~ 150°C
RB162LAM-40TFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Operating Temperature - Junction
- 150°C (Max)
1N3595
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 1 NA @ 125 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 200 MA
SBR30A100CTE
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
BAS3005A02VH6327XTSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 300 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 500 MA
MSCD60-08
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 60A
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 200 A
RB501V-40_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 10 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 100 MA
V40100K-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N5061TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 2.5 A