MURS160-M3/52T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
Products
VS-2EJH02HM3/6A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 930 MV @ 2 A
DB4X501K0R
- Manufacturer
- Panasonic Electronic Components
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 125°C (Max)
MSKD60-16
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 60A
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 200 A
BAV21,113
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
DA6X103T0R
- Manufacturer
- Panasonic Electronic Components
- Current - Average Rectified (Io) / diode
- 100mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
DFLS260Q-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 620 MV @ 2 A
V20100R-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N4151TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 50 MA
MSCD70-08
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 70A
- Voltage - Forward (Vf) (Max) @ If
- 1.48 V @ 200 A
BYX10GP-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 1600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 2 A
MSCD60-16
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 60A
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 200 A
SB550A-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 5 A
UGF8HCTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 4A
- Operating Temperature - Junction
- -55°C ~ 150°C
RS3GB-T
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 3 A
BAS16W,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 500 NA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
MSCD165-12
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 165A
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 300 A
PMEG100T080ELPEZ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 4 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 810 MV @ 8 A