D16-4148E3/TU
- Manufacturer
- Microsemi Corporation
- Operating Temperature - Junction
- -55°C ~ 150°C
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
Products
BAV103,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
VS-25CTQ045STRLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
APT60D120BG
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 250 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 60 A
FST8360M
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 80A (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
RGP10ME-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
MAD1105E3/TU
- Manufacturer
- Microsemi Corporation
- Mounting Type
- Through Hole
- Supplier Device Package
- 14-DIP
PU1JLS
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 1 A
MURT40060R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
STTH3006W
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 25 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.85 V @ 30 A
VS-HFA08TB120STRLP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 3.3 V @ 8 A
1N4936RLG
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 1 A
FST8340M
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 80A (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
IDW40E65D2FKSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 40 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 2.3 V @ 40 A
NXPS20S100CX,127
- Manufacturer
- WeEn Semiconductors
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 175°C (Max)
1N4934RLG
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 1 A
MURT30005R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
PU1JFS
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 1 A