VS-MBRD650CTTRLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -40°C ~ 150°C
Products
JANTX1N5806
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 1 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 1 A
VS-30CTQ035STRLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 175°C
ES1BHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 1 A
STPS20200CTN
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C
CUS05S40,H3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 30 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 350 MV @ 100 MA
MBR50035CTR
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N5615
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 3 A
VS-15CTQ045STRLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
SE20PAJHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 2 A
VS-HFA08TA60CSPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 150°C
D4G-T
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
MAD1107E3/TU
- Manufacturer
- Microsemi Corporation
- Mounting Type
- Through Hole
- Supplier Device Package
- 14-DIP
IDW100E60FKSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 40 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2 V @ 100 A
MBR500100CT
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
SBAS40LT3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 1 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 40 MA
MBR3045FCTE3/TU
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
BAV21WS-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA