2N4858A
- Manufacturer
- Solid State Inc.
- Voltage - Breakdown (V(BR)GSS)
- 40 V
- Power - max
- 300 MW
Diodes and transistors
MV2N4861UB
- Manufacturer
- Microchip Technology
- FET Type
- N-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
BFR31,235
- Manufacturer
- NXP USA Inc.
- FET Type
- N-Channel
- Current - Drain (Idss) @ Vds (Vgs=0)
- 1 MA @ 10 V
MQ2N2608
- Manufacturer
- Microchip Technology
- FET Type
- P-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
MQ2N2609
- Manufacturer
- Microchip Technology
- FET Type
- P-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
MQ2N5114UB
- Manufacturer
- Microchip Technology
- FET Type
- P-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
MQ2N5114UB/TR
- Manufacturer
- Microchip Technology
- FET Type
- P-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
PMBFJ309,215
- Manufacturer
- NXP USA Inc.
- FET Type
- N-Channel
- Voltage - Breakdown (V(BR)GSS)
- 25 V
2N5116UB/TR
- Manufacturer
- Microchip Technology
- FET Type
- P-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
MX2N4858
- Manufacturer
- Microchip Technology
- FET Type
- N-Channel
- Voltage - Breakdown (V(BR)GSS)
- 40 V
BFR30,215
- Manufacturer
- NXP USA Inc.
- FET Type
- N-Channel
- Current - Drain (Idss) @ Vds (Vgs=0)
- 4 MA @ 10 V
MX2N4859
- Manufacturer
- Microchip Technology
- FET Type
- N-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
2N5115UB/TR
- Manufacturer
- Microchip Technology
- FET Type
- P-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
2N4093UB
- Manufacturer
- Microchip Technology
- FET Type
- N-Channel
- Voltage - Breakdown (V(BR)GSS)
- 40 V
MX2N4860
- Manufacturer
- Microchip Technology
- FET Type
- N-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
2N4857A
- Manufacturer
- Solid State Inc.
- Voltage - Breakdown (V(BR)GSS)
- 40 V
- Power - max
- 300 MW