Diodes and transistors
2N4856
- Manufacturer
- Solid State Inc.
- Voltage - Breakdown (V(BR)GSS)
- 40 V
- Power - max
- 300 MW
2N4856
- Manufacturer
- Microchip Technology
- FET Type
- N-Channel
- Voltage - Breakdown (V(BR)GSS)
- 40 V
2N4392
- Manufacturer
- Solid State Inc.
- Voltage - Breakdown (V(BR)GSS)
- 40 V
- Current - Drain (Idss) @ Vds (Vgs=0)
- 25 MA @ 20 V
MQ2N2608UB/TR
- Manufacturer
- Microchip Technology
- FET Type
- P-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
MV2N4858
- Manufacturer
- Microchip Technology
- FET Type
- N-Channel
- Voltage - Breakdown (V(BR)GSS)
- 40 V
2N4861UB
- Manufacturer
- Microchip Technology
- FET Type
- N-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
2N5114UB/TR
- Manufacturer
- Microchip Technology
- FET Type
- P-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V
MV2N5114UB/TR
- Manufacturer
- Microchip Technology
- FET Type
- P-Channel
- Voltage - Breakdown (V(BR)GSS)
- 30 V

