TLE2141QDRQ1
- Manufacturer
- Texas Instruments
- Amplifier Type
- General Purpose
- Slew Rate
- 45 V/µs
Electronic components
SR105
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 500 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 1 A
S4J
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 100 µA @ 600 V
- Operating Temperature - Junction
- -55°C ~ 150°C
TLC27L2IDRG4
- Manufacturer
- Texas Instruments
- Amplifier Type
- General Purpose
- Slew Rate
- 0.05 V/µs
AS1FJ-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
AS3BJHM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 3 A
TLV3542IDR
- Manufacturer
- Texas Instruments
- Amplifier Type
- General Purpose
- Slew Rate
- 150 V/µs
S07D-M-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
RB060L-40TE25
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1 MA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 2 A
RMPG06G-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
APX324TSG-13
- Manufacturer
- Diodes Incorporated
- Amplifier Type
- General Purpose
- Slew Rate
- 1 V/µs
VSSB3L6S-M3/52T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1.2 MA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 590 MV @ 3 A
MURS3DBFL-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 3 A
TS924IYPT
- Manufacturer
- STMicroelectronics
- Amplifier Type
- General Purpose
- Slew Rate
- 1.3 V/µs
SF14GH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1 A
ER3EAF_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 3 A
AZV358GTR-E1
- Manufacturer
- Diodes Incorporated
- Amplifier Type
- General Purpose
- Slew Rate
- 1 V/µs
SS16HM3_B/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 1 A