JANTX1N6627US/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 440 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 2 A
Electronic components
120NQ040R-1
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 10 MA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 610 MV @ 120 A
UES1003SM-1/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 1 A
VS-HFA90NH40PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 MA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.67 V @ 180 A
UES1002SM-1
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 1 A
UES1105
- Manufacturer
- Microchip Technology
- Operating Temperature - Junction
- -55°C ~ 150°C
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
TL062CD
- Manufacturer
- STMicroelectronics
- Current - Supply
- 200 UA
- Current - Input Bias
- 200 PA
UES1003SM-1
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 1 A
UES1001SM/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 1 A
JANS1N5811US
- Manufacturer
- Microchip Technology
- Operating Temperature - Junction
- -65°C ~ 175°C
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 4 A
JANTX1N6627US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 440 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 2 A
JANTX1N6628US/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 660 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 2 A
JANTX1N6628US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 660 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 2 A
JANTXV1N6642UB/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
VS-T40HFL20S02
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 200 V
- Reverse Recovery Time (trr)
- 200 Ns
JAN1N6642UBCC
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 300mA
- Operating Temperature - Junction
- -65°C ~ 175°C
JAN1N5194
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 1.25 MA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA