NSVBAV99WT3G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 215mA
- Operating Temperature - Junction
- -65°C ~ 150°C
Electronic components
BAW27-TAP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 NA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 400 MA
BAT54SWQ-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -65°C ~ 125°C
BAV19W
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 100 NA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
BAT54S-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Operating Temperature - Junction
- 125°C (Max)
1SS387,L3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 500 NA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
MMBD717LT1G
- Manufacturer
- Onsemi
- Operating Temperature - Junction
- -55°C ~ 150°C
- Voltage - Forward (Vf) (Max) @ If
- 370 MV @ 1 MA
BAV16W-7-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
BAT54SFILM
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 300mA (DC)
- Operating Temperature - Junction
- -40°C ~ 150°C
1N914BWS
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
BAV23C-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 400mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
BAS321,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
BAT54S-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
1N4006G-T
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
BAV199E6433HTMA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
BAS21AHT1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 40 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
BAT54C-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
RB751S40_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 500 NA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 370 MV @ 1 MA