RB531SM-30FHT2R
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 350 MV @ 10 MA
Electronic components
1SS402TE85LF
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 50mA
- Operating Temperature - Junction
- 125°C (Max)
RB751SM-40T2R
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 500 NA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 370 MV @ 1 MA
BAV756DW-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -65°C ~ 150°C
DLLFSD01LP3-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 200 NA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
BAS40-05T-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
BAS40H,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 10 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 40 MA
SDMP0340LAT-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 30mA (DC)
- Operating Temperature - Junction
- -40°C ~ 125°C
1SS308(TE85L,F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 125°C (Max)
PMEG2005AEL,315
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1.5 MA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 440 MV @ 500 MA
BAT5404E6327HTSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
CUS05S30,H3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 150 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 340 MV @ 100 MA
BAS70-04-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
BAS70-00-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
PMEG3005CT,215
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 500mA
- Operating Temperature - Junction
- 150°C (Max)
1N5818-T
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 1 MA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1 A
BAS70-06-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 125°C (Max)
BAV21W-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA