SS24S-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 2 A
Electronic components
STTH12012TV1
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- 150°C (Max)
ES1A
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 1 A
BAW56TT1G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
SS3P3-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 3 A
BAV70-HE3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 250mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
RB161MM-20TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 700 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 350 MV @ 1 A
MBRT200100
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
SS12-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
IDW40G120C5BFKSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 55A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
PMEG2010AEB,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1.5 MA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 620 MV @ 1 A
MEE250-12DA
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 260A
- Operating Temperature - Junction
- -40°C ~ 150°C
STPS2L40ZFY
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 35 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 630 MV @ 2 A
DSEP2X61-12A
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -40°C ~ 150°C
NSR02L30NXT5G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 3 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 200 MA
VS-UFB130FA40
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 65A (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1.37 V @ 60 A
1N5819HW1-7-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 510 MV @ 1 A
VS-401CNQ045PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 400A
- Voltage - Forward (Vf) (Max) @ If
- 780 MV @ 400 A