VSSA310S-E3/5AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 150 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 3 A
Electronic components
BAV70HDW-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 125mA
- Operating Temperature - Junction
- -65°C ~ 150°C
SE30AFJ-M3/6A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
SL56AFL-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 5 A
BAV99DWQ-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
RSX301LAM30TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 200 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 420 MV @ 3 A
NSVDAN222T1G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 100mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
STPS160A
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 4 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 670 MV @ 1 A
RB717F-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 30mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
S2M-E3/52T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
BAS21AW,115
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 225mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
BYG20J-E3/TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 1.5 A
GSD2004C-G3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C (Max)
BYG21M-E3/TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 1.5 A
BAS16HTWQ-13R
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
SS310LWH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 20 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 3 A
BAS40-04-HE3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 125°C (Max)
RB068MM100TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 400 NA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 870 MV @ 2 A