STPS10L60D
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 350 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 10 A
Electronic components
RFN6BGE2DTL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- 150°C
STTH1002CBY-TR
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -40°C ~ 175°C
VS-E5TH3006-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 30 A
RBR10BGE30ATL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C
STPS30SM100ST
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 45 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 870 MV @ 30 A
NRVHP620MFDT1G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -55°C ~ 175°C
VBT3045BP-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 MA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 30 A
WNS20S100CBJ
- Manufacturer
- WeEn Semiconductors
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C (Max)
VS-20TQ045-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2.7 MA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 730 MV @ 40 A
V10D100CHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
STPS1045D
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 100 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 10 A
VS-10CSH01HM3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 175°C
V10DM100C-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 175°C
VS-HFA06TB120-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 3.9 V @ 12 A
V20100S-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 20 A
BAT74S,135
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
BAS21DW-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 150°C