BAS70-04HE3-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 70mA
- Operating Temperature - Junction
- -55°C ~ 125°C
Electronic components
BAS70-05HE3-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 70mA
- Operating Temperature - Junction
- -55°C ~ 125°C
RB461FT106
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 490 MV @ 700 MA
BAV99STB6_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -55°C ~ 150°C
STTH1L06RL
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
BAS40-04HE3-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 125°C
PMEG150G30ELPX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 30 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 3 A
DAP222TL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 150°C (Max)
VSS8D5M10HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 400 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 2.5 A
BAS40TW_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
S5D-E3/9AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 5 A
BAT54CTB6_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
BAT54SWTHE3-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 125°C
RGL34A-E3/98
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 500 MA
BAS40SDW-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
BYM12-100-E3/96
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
VSS8D5M10HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 400 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 2.5 A
BAW56DW_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -55°C ~ 150°C