TSSE3U60 RVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 MA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 3 A
Electronic components
DST560S-A
- Manufacturer
- Littelfuse Inc.
- Current - Reverse Leakage @ Vr
- 700 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 5 A
BAT54TWP_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
DGP15-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1500 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
BAS70DW-05Q-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
SGL41-30-E3/96
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
BAS21AVD,135
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
U3D-E3/57T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 3 A
BAS7005E6433HTMA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
BYV27-150-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 165 V
- Voltage - Forward (Vf) (Max) @ If
- 1.07 V @ 3 A
BAS70-07WH6327
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- 150°C
BYT52M-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
BAV199UMFHTL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- 150°C
BYW36-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
RB050L-40DDTE25
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1 MA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 3 A
BYT54M-TAP
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 1 A