VS-ETH3007THN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 2.1 V @ 30 A
Electronic components
PUAD10BCH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
STPSC6H065DLF
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 60 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.55 V @ 6 A
VFT3045BP-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 MA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 30 A
V10D170CHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 175°C
C3D02060F
- Manufacturer
- Wolfspeed, Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 2 A
V20PWM153C-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C
FFSD0865B-F085
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 40 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 8 A
V15K150C-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3.2A
- Operating Temperature - Junction
- -40°C ~ 150°C
VS-ETL1506FP-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 15 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.07 V @ 15 A
V10K100C-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3.9A
- Operating Temperature - Junction
- -40°C ~ 150°C
C3D02065E
- Manufacturer
- Wolfspeed, Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 2 A
V20PWM15CHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C
BYT79X-600,127
- Manufacturer
- WeEn Semiconductors
- Current - Reverse Leakage @ Vr
- 50 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.38 V @ 15 A
SBR6200CTL-13
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -65°C ~ 175°C
STTH15AC06FP
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 2 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.9 V @ 15 A
V15KM150C-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3.7A
- Operating Temperature - Junction
- -40°C ~ 175°C
VS-15EWX06FN-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 3.2 V @ 15 A