MBR30200CT_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -65°C ~ 175°C
Electronic components
SEG10FG-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 700 MA
VS-MBR20100CT-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
1PS76SB21Z
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 15 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 200 MA
VS-10CTQ150S-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 175°C
BAS283-GS08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
BYV32E-200,127
- Manufacturer
- WeEn Semiconductors
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- 150°C (Max)
SBA0840CS-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 800 MA
STR20100LCT_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
RB751S40X_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 500 NA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 370 MV @ 1 MA
V60DM120CHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 175°C
BAV20W-G3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
MBR20L100CT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
US1M-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
MBR30200FCT_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
SS18W_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 500 µA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 1 A
V10DL63CHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
SS12_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A